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| Advance Product Information September 1, 2005 9 - 10.5GHz High Power Amplifier Key Features * * * * * * TGA2704 Frequency Range: 9.0 -10.5 GHz 38 dBm Nominal Output Power 20 dB Nominal Gain Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive) 0.25 um 3MI pHEMT Technology Chip Dimensions 3.52 x 2.61 x 0.10 mm (0.139 x 0.103 x 0.004 in) Primary Applications * * Point-to-Point Radio Communications Product Description The TriQuint TGA2704 is a High Power Amplifier MMIC for 9 - 10.5GHz applications. The part is designed using TriQuint's 0.25um 3MI pHEMT production process. The TGA2704 nominally provides 38 dBm output power and 40% PAE for bias of 9V, 1.05A. The typical gain is 20 dB. The part is ideally suited for low cost markets such as Point-to-Point Radio and Communications. The TGA2704 is 100% DC and RF tested onwafer to ensure performance compliance. The TGA2704 has a protective surface passivation layer providing environmental robustness. Lead-Free & RoHS compliant. CW Saturated Output Power (dBm) 40 39 38 37 36 35 34 33 32 31 30 9 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 9 Measured Fixtured Data CW S-Parameters (dB) Vd = 7 V, Id = 1.4A S21 S11 S22 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 Frequency (GHz) 7V, 1.4A 8V, 1.4A 9V, 1.05A 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 10 V -1 TO +0.5 V 3.85 A 85 mA 23 dBm 11.3 W 150 C 320 0C -65 to 150 0C 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this power dissipation with a base plate temperature of 60 0C, the median life is 1.0E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 CW Saturated Output Power @ 19 dBm Pin Pulsed Saturated Output Power @ 19 dBm Pin & 25% Duty Cycle CW Power Added Eff. @ 19 dBm Pin Pulsed Power Added Eff. @ 19 dBm Pin & 25% Duty Cycle Small Signal Gain Temperature Coefficient TYPICAL 9.0 - 10.5 7 1.4 -0.6 20 10 10 36.5 36.7 40 39 -0.03 TYPICAL 9.0 - 10.5 9 1.05 -0.6 19 10 10 38 38.5 39 38 -0.03 UNITS GHz V A V dB dB dB dBm dBm % % dB/0C TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 7 V Id = 1.4 A Pdiss = 9.8W Small Signal Vd = 7 V Id = 1.7 A @ Psat Pdiss = 7.2 W Pout = 4.8 W (RF) TCH (OC) 140 TJC (qC/W) 7.1 TM (HRS) 2.4E+6 JC Thermal Resistance (channel to Case) JC Thermal Resistance (channel to Case) 121 7.1 1.4E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70oC baseplate temperature. . 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 Measured Data Bias Conditions: Vd = 7V, Idq = 1.4 A TGA2704 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 Frequency (GHz) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 4 CW Gain (dB) CW Return Loss (dB) S22 S11 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 Measured Data Pin = 19dBm, CW Power TGA2704 40 39 CW Saturated Output Power (dBm) 38 37 36 35 34 33 32 7V, 1.4A 31 30 9 9.2 9.4 9.6 9.8 10 10.2 8V, 1.4A 9V, 1.05A 10.4 10.6 Frequency (GHz) 50 48 46 CW Power Added Eff. (%) 44 42 40 38 36 34 7V, 1.4A 32 30 9 9.2 9.4 9.6 9.8 10 10.2 8V, 1.4A 9V, 1.05A 10.4 10.6 5 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 Measured Data Frequency @ 10GHz, CW Power 40 38 36 CW Pout (dBm) & Gain (dB) 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 40 38 36 CW Pout (dBm) & Gain (dB) 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 20 12 14 16 18 20 2.40 Vd = 7V, Id = 1.4A 2.30 2.20 2.10 2.00 Pout 1.90 1.70 Id (A) Id (A) 6 1.80 Id Gain 1.60 1.50 1.40 1.30 1.20 1.10 1.00 2.40 Vd = 8V, Id = 1.4A 2.30 2.20 2.10 2.00 1.90 1.80 1.70 Pout Id Gain 1.60 1.50 1.40 1.30 1.20 1.10 1.00 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 Measured Data Frequency @ 10GHz, CW Power TGA2704 40 38 36 CW Pout (dBm) & Gain (dB) 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 20 2.40 Vd = 9V, Id = 1.05A 2.30 2.20 2.10 2.00 Pout Id 1.90 1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 Id (A) 7 1.80 Gain TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 Measured Data Pin = 19dBm, Pulsed Power, 25% DC TGA2704 40 39 Pulsed Saturated Output Power (dBm) 38 37 36 35 34 33 32 31 30 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 Frequency (GHz) 7V, 1.4A 8V, 1.4A 9V, 1.05A 50 48 Pulsed Power Added Eff. (%) 46 44 42 40 38 36 34 32 30 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 8 7V, 1.4A 8V, 1.4A 9V, 1.05A Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 Measured Data Frequency @ 10GHz, Pulsed Power, 25% DC TGA2704 40 38 Pulsed Pout (dBm) & Gain (dB) 36 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 40 38 Pulsed Pout (dBm) & Gain (dB) 36 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 2.40 Vd = 7V, Id = 1.4A 2.30 2.20 2.10 2.00 1.90 1.70 1.60 Id (A) Id (A) 9 Pout 1.80 Id Gain 1.50 1.40 1.30 1.20 1.10 1.00 12 14 16 18 20 2.40 Vd = 8V, Id = 1.4A 2.30 2.20 2.10 2.00 Pout 1.90 1.80 1.70 Id 1.60 1.50 1.40 1.30 1.20 1.10 1.00 20 Gain TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 Measured Data Frequency @ 10GHz, Pulsed Power, 25% DC 40 38 Pulsed Pout (dBm) & Gain (dB) 36 34 32 30 28 26 24 22 20 18 16 14 12 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 20 2.40 Vd = 9V, Id = 1.05A 2.30 2.20 2.10 2.00 1.90 1.80 Pout Id 1.70 1.60 1.50 Gain 1.40 1.30 1.20 1.10 1.00 Id (A) 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 Measured Data Frequency @ 10GHz, CW TOI 45 44 43 TOI @ 10GHz (dBm) 42 41 40 39 38 37 36 35 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power/Tone (dBm) 7V, 1.4A 8V, 1.4A 9V, 1.05A 70 65 60 CW IMR3 @ 10GHz (dBc) 55 50 45 40 35 30 25 20 15 16 17 18 19 20 21 22 23 24 25 26 27 28 11 7V, 1.4A 8V, 1.4A 9V, 1.05A Output Power/Tone (dBm) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 Mechanical Drawing 0.125 0.213 (0.005) (0.008) 0.544 (0.021) 2.677 (0.105) 3.411 (0.134) 2.610 (0.103) 2.401 (0.095) 2.332 (0.092) 2 3 4 2.491 (0.098) 1.305 (0.051) 1 5 0.278 (0.011) 0.209 (0.008) 0 8 7 6 0 0.213 (0.008) 0.544 (0.021) 2.677 (0.105) Units: Millimeters (inches) Thickness: 0.10 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond pad # 1 Bond pad # 2, 8 Bond pad # 3, 7 Bond pad # 4, 6 Bond pad # 5 (RF Input) (Vg) (Vd1) (Vd2) (RF Output) 0.150 x 0.300 0.120 x 0.120 0.120 x 0.290 0.250 x 0.140 0.125 x 0.300 (0.006 x 0.012) (0.005 x 0.005) (0.005 x 0.011) (0.010 x 0.006) (0.005 x 0.012) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 12 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com RF P 1.305 (0.051) 0.119 (0.005) 3.524 (0.139) Advance Product Information September 1, 2005 TGA2704 Recommended Chip Assembly Diagram Vg 1000pF 1000pF 1000pF Vd RF In RF Out 1000pF 1000pF 1000pF Vg Vd = 7 to 9 V Vg = -0.6 V Typical Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 1, 2005 TGA2704 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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